Scanning interference electron microscope
AssigneeHitachi High-Technologies Corporation
InventorsTakao Matsumoto, Masanari Koguchi
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Abstract
The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneously; and (3) Detection efficiency of electron beams is low. The invention provides a scanning interference electron microscope which is improved in detection efficiency of electron beam interference fringes, and enables the user to observe electric and magnetic information easily in a micro domain of a specimen as a scan image of a high S/N ratio under optimum conditions.
Claims17
A scanning interference electron microscope, comprising:
- a specimen stage;
- an electron optical system for illuminating an electron beam on a specimen placed and held on the specimen stage;
- and
- an imaging system for detecting electrons generated from the specimen by the scanning;
- wherein the electron optical system has
- an electron gun,
- means for splitting an electron beam generated by the electron gun into two optical paths,
- means for scanning one of the electron beams whose optical paths were splitted onto the specimen, and
- the imaging system has one pair of asymmetric 2-dimensional detectors with integration capability for detecting interference fringes of the electron beam having transmitted through the specimen by the electron beam scanning and the electron beam having passed through other electron optical axis.
A scanning interference microscope, comprising:
- a specimen stage;
- means for scanning an electron beam on a specimen placed and held on the top of the specimen stage;
- means for generating interference fringes for an electron beam having transmitted through the specimen;
- and
- one pair of asymmetric 2-dimensional detectors with integration capability for detecting the interference fringes.
The scanning interference electron microscope,
- wherein
- a voltage applied to an electron biprism and a voltage applied to an electron beam deflection coil are varied in synchronization with an image magnification.
Dependencies are inferred from the claim text.