Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor

An apparatus for acquiring physical information using a device for detecting a physical distribution for a predetermined purpose based on unit signals, the device including, as unit components, a detecting part for detecting an electromagnetic wave and a unit signal generating part for generating a corresponding unit signal based on a quantity of the electromagnetic wave detected by the detecting part and outputting the unit signal, and the unit components being disposed on a same substrate in a predetermined order, the apparatus comprising:

• a stacked member disposed on an incident side of the detecting part on which the electromagnetic wave is incident, having a structure in which a plurality of layers having different refractive indexes between adjacent ones and each having a predetermined thickness is stacked, and also having a characteristic that a predetermined wavelength region component of the electromagnetic wave is reflected, and a remaining part of the electromagnetic wave is transmitted;
• and
• a signal processing unit for acquiring physical information for a predetermined purpose based on the unit signal of a transmitted wavelength region component detected by the sensing part and transmitted through the stacked member, the unit signal being obtained from the unit signal generating part.

A light-receiving device comprising:

• a photoelectric transducer formed in a semiconductor layer;
• and
• a single crystal layer formed on a portion of the semiconductor layer in which at least the photoelectric transducer is formed, the single crystal layer being composed of a material having a wider band gap as compared to the semiconductor layer.

A method for manufacturing a light-receiving device, which includes a photoelectric transducer formed in a semiconductor layer, the method comprising forming a single crystal layer on a portion of the semiconductor layer in which at least the photoelectric transducer is formed, wherein the single crystal layer is composed of a material having a wider band gap as compared to the semiconductor layer.

A solid-state imaging device comprising a photoelectric transducer formed in a semiconductor layer, and a single crystal layer formed on a portion of the semiconductor layer in which at least the photoelectric transducer is formed, wherein the single crystal layer is composed of a material having a wider band gap as compared to the semiconductor layer.

A method for manufacturing a solid-state imaging device, which includes a photoelectric transducer formed in a semiconductor layer, the method comprising forming a single crystal layer on a portion of the semiconductor layer in which at least the photoelectric transducer is formed, wherein the single crystal layer is composed of a material having a wider band gap as compared to the semiconductor layer.