Back to results
US 2006/0124592 A1Published application
Chemical mechanical polish slurry
OwnerAnne Miller, Michael Klug +1inventors
InventorsAnne Miller, Michael Klug, A. Feller
Life of this patent
Estimating the term…
Abstract
Relatively large oxide particles formed during the CMP process can scratch a conductive material being polished. An interference agent is added the polishing slurry, which results in significant reduction in scratching of the conductive material by interfering with the formation of the large oxide particles. The interference agent may comprise materials such as anionic surfactants or reactive silanol agents.
Claims19
A polishing slurry, comprising:
- an abrasive material;
- and
- an interference agent.
A polishing slurry comprising:
- an abrasive material;
- an oxidizer;
- a chelating agent;
- and
- an interference agent.
2 more elements
A method comprising:
- providing a conductive material layer disposed on a dielectric material layer and into at least one opening within said dielectric layer;
- positioning a rotating polishing pad proximate said conductive material layer;
- disposing a polishing slurry between said conductive material layer and said rotating polishing pad, wherein said polishing slurry comprises an abrasive material, an oxidizer, and an interference agent;
- and
- removing a portion of said conductive material layer not within said at least one opening.
2 more elements
Dependencies are inferred from the claim text.