Polishing slurry for chemical mechanical polishing and method for polishing substrate
AssigneeHitachi Chemical Company, Ltd.
InventorsKouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto
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Abstract
The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.
Claims7
A CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond and water.
A method for polishing a substrate, wherein the substrate on which a film to be polished is formed is pressed under pressure against a polishing cloth on a polishing platen, and the film on the substrate and the polishing cloth are relatively moved while a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond and water is supplied between the film and the polishing cloth and the acetylene bond segment of the organic compound is kept adsorbed on the film, thereby polishing the film.
Dependencies are inferred from the claim text.