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US 2006/0124589 A1Published application
Apparatus and method for removing photoresist in a semiconductor device
OwnerDae-Gun Leeinventor
Life of this patent
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Abstract
A photoresist in a semiconductor device with copper wiring is effectively removed at a low temperature of 25° C. using a photoresist removing apparatus that includes a vacuum chamber, a plasma generator located in the upper side of the chamber, and a wafer chuck that is insulated at all but a wafer-contacting surface, that is applied with an RF bias power, and that is located in the lower side of the chamber.
Claims20
An apparatus for removing a photoresist from a wafer, comprising:
- a vacuum chamber;
- a plasma generator in an upper side of the vacuum chamber;
- and
- a wafer chuck at a lower side of the vacuum chamber and receiving an RF bias power, the wafer chuck being insulated on its entire surface excluding a surface in contact with the wafer.
1 more element
A method for removing a photoresist from a wafer, comprising:
- loading the wafer on the wafer chuck in a vacuum chamber;
- stabilizing a process condition for at least one of gas flow, chamber pressure, and temperature to a predetermined setting point;
- generating plasma at a temperature of 20-50° C. by supplying a source power;
- and
- removing the photoresist.
2 more elements
A method of removing a photoresist, comprising:
- supplying a source power to a photoresist removal apparatus comprising a chamber having a chamber temperature of 20-50° C. and at least one stable process condition selected from the group consisting of gas flow, chamber pressure, and temperature, sufficient to generate a plasma in the chamber;
- and
- removing the photoresist from a wafer in the chamber.
Dependencies are inferred from the claim text.