Rinse liquid for lithography and method for forming resist pattern using same
OwnerMasakazu Kobayashi, Hiroyuki Ichikawa +2inventors
InventorsMasakazu Kobayashi, Hiroyuki Ichikawa, Yoshiaki Yamada, Keiichi Tanaka
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Abstract
The present invention provide with a rinse solution for lithography and a resist pattern forming method using the same, which can prevent an inclination and peeling-off of a resist pattern and form a resist pattern having a high aspect ratio with high reproducibility. The rinse solution for lithography of the present invention comprises water and a nonionic surfactant having an ethyleneoxy group but not having a fluorine atom. The resist forming method of the present invention comprises the step of rinsing the pattern after development treatment with the rinse solution for lithography.
Claims10
A rinse solution for lithography which is characterized in comprising water and a nonionic surfactant having an ethyleneoxy group (—CH2CH2O—) but not having a fluorine atom.
Dependencies are inferred from the claim text.