Method of increasing the area of a useful layer of material transferred onto a support
AssigneeS.O.I.Tec Silicon on Insulator Technologies S.A., a French company
InventorChristophe Maleville
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Abstract
A composite structure in accordance with the invention includes front faces of first and second substrates that are molecularly bonded to each other, wherein the dimensions of the second substrate outline are larger than the first substrate outline. The front faces are molecularly bonded such that the outline of the first front face is disposed at least partially within the outline of the second front face. A peripheral ring extends around the first front face and facing the first substrate, in which bonding between the front faces is weak or absent, and has a maximum width of less than about 0.5 mm.
Claims15
A composite structure, comprising:
- a first substrate having a first front face that has a first outline;
- and
- a second substrate having a second front face that has a second outline of dimensions larger than the first outline;
- wherein the first and second front faces are molecularly bonded to each other with the first outline disposed at least partially within the second outline in an area of overlap, such that a peripheral ring extending around the first front face within the area of overlap in which bonding between the front faces is weak or absent has a maximum width of less than 0.5 mm.
Dependencies are inferred from the claim text.