Wafer support apparatus for electroplating process and method for using the same

A wafer support apparatus for use in an electroplating process, comprising:

• a first material layer having an area for receiving a wafer to be processed;
• a sacrificial anode defined over the first material layer;
• a second material layer configured to overlie a peripheral region of the wafer and the first material layer outside the peripheral region of the wafer, the second material layer including a cutout to expose a surface of the wafer to be processed, the second material layer being further configured to form a seal between the second material layer and the peripheral region of the wafer;
• and
• a pair of circuits integrated within the second material layer, each circuit in the pair of circuits including an electrical contact defined to electrically connect with the surface of the wafer to be processed, the pair of circuits being electrically isolated from the sacrificial anode.

A method for supporting a wafer in an electroplating process, comprising:

• placing a wafer between a bottom film layer and a top film layer, wherein a surface of the wafer to be processed is exposed through an opening in the top film layer;
• establishing a liquid seal between the top film layer and a periphery of the wafer;
• establishing an electrical connection between a first electrical circuit and a first peripheral location of the wafer, wherein the first electrical circuit is integral to the top film layer;
• establishing an electrical connection between a second electrical circuit and a second peripheral location of the wafer, the second peripheral location being diametrically opposed about the wafer to the first peripheral location, wherein the second electrical circuit is integral to the top film layer;
• positioning the bottom and top film layers having the wafer placed therebetween on a platen of an electroplating system;
• and
• traversing the platen below a processing head of the electroplating system, the traversing causing the surface of the wafer exposed through the opening in the top film layer to be electroplated.