Plasma processor and plasma processing method
AssigneesTokyo Electron Limited, Nihon Koshuha Co., Ltd.
InventorsNobuo Ishii, Kibatsu Shinohara
Life of this patent
Estimating the term…
Loading patent…
AssigneesTokyo Electron Limited, Nihon Koshuha Co., Ltd.
InventorsNobuo Ishii, Kibatsu Shinohara
Estimating the term…
A plasma processor includes a table on which a target object is to be placed, a vessel which accommodates the table and in which a plasma is to be generated by a high-frequency electromagnetic field, a high-frequency oscillator (30) which generates a high-frequency electromagnetic field, and a reference oscillator (34) which is lower in output power than the high-frequency oscillator (30) and stable in oscillation frequency. A reference signal generated by the reference oscillator (34) is injected into the high-frequency oscillator (30) to fix an oscillation frequency of the high-frequency oscillator (30) at a frequency of a reference signal. Therefore, accurate load matching is performed to improve an energy efficiency when an automatic matching device provided between the high-frequency oscillator (30) and vessel is designed based on the frequency of the reference signal.
A plasma processor characterized by comprising:
A plasma processing method characterized by comprising the steps of:
Dependencies are inferred from the claim text.