Enhanced wafer cleaning method

A method for removing post etch residues in a single wafer cleaning system, comprising method operation of:

• providing a fluid to a proximity head disposed over a substrate;
• heating the fluid;
• generating a meniscus of the fluid between a surface of the substrate and an opposing surface of the proximity head;
• maintaining a substantially constant residence time of less than 30 seconds for the fluid over the surface of the substrate.

A single wafer cleaning system, comprising:

• a fluid source;
• a proximity head operably connected to the fluid source;
• a substrate support configured to support a substrate disposed thereon, the substrate support capable of moving under the proximity head to form a meniscus of fluid from the fluid source between opposing surfaces of the proximity head and the substrate;
• and
• a controller in communication with the substrate support, the controller defining a residence time of the meniscus of the fluid over the surface of the substrate through movement of the substrate support.