US 2006/0124052 A1Published application

Heat shielding member of silicon single crystal pulling system

AssigneeSumitomo Mitsubishi Silicon Corporation

InventorsKazuhiro Harada, Yoji Suzuki, Senlin Fu, Hisashi Furuya, Hidenobu Abe

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Abstract

A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.

Claims17

Dependent claims

A heat shielding member of a silicon single crystal pulling-up device which is provided in a device which pulls up a silicon single crystal rod (25) from a silicon melt (12) which is stored in a quartz crucible (13) which is heated by a heater (18) surrounding the outer peripheral face of the quartz crucible (13) and equipped with a tube portion (37) whose lower end is situated upward at an interval from the surface of the silicon melt (12) and which shields radiant heat from the heater (18) surrounding the outer peripheral face of the silicon single crystal rod (25), a swelling portion (41) which is provided at the lower portion of the tube portion (37) by being swollen to a tube direction, and a ring-shape heat accumulating portion (47) which is provided at the inside of the swelling portion (41) and surrounds the outer peripheral face of the lower portion of the silicon single crystal rod (25), wherein

the heat accumulating portion (47) is a thermal conductivity of 5 W/(m·° C.) or less, and
the heat accumulating portion (47) has an inner peripheral face which is in parallel to the axial line of the silicon single crystal rod (25), or is slanted at an angle of −30 degrees or more and +30 degrees or less and is formed so that
d is 100 mm or more when the diameter of the silicon single crystal rod (25) is d, the inner peripheral face of the heat accumulating portion (47) is a height (H1) of 10 mm or more and d/2 or less, and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod (25) and the inner peripheral face of the heat accumulating portion (47) is 10 mm or more and 0.2 d or less.

Dependencies are inferred from the claim text.