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US 2006/0079159 A1Published application
Chemical mechanical polish with multi-zone abrasive-containing matrix
OwnerMarkus Naujok, Laertis Economikosinventors
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OwnerMarkus Naujok, Laertis Economikosinventors
Estimating the term…
Chemical mechanical polish (CMP) devices, CMP systems, methods of CMP, and methods of manufacturing CMP devices. A CMP device comprises a plurality of zones, with each zone having a matrix of fixed abrasive features disposed therein. The abrasive-containing matrix within each zone has material removal properties that differ from the material removal properties of the abrasive-containing matrixes of the other zones. The material removal property differences of the abrasive-containing matrixes of the zones may achieved by using different abrasive materials, densities, heights, or shapes, or combinations thereof, of the fixed abrasive features within the zones, or by using physical or chemical conditioning. When the novel CMP device is used to planarize a semiconductor wafer, a substantially planar surface with an improved CMP profile results.
A chemical mechanical polish (CMP) device for planarizing a semiconductor wafer, the CMP device comprising:
A method of planarizing a top surface of a semiconductor wafer, the method comprising:
A method of manufacturing a chemical mechanical process (CMP) device, the method comprising:
The method according to claim 28, wherein attaching the plurality of first abrasive features in the first zone and the plurality of second abrasive features in the second zone comprise attaching second abrasive features having different materials, densities, heights, shapes, or combinations thereof, than the first abrasive features.
Dependencies are inferred from the claim text.