High density plasma grown silicon nitride

A method for enhancing the nitrogen (N) content in a silicon nitride (SiNx) film, the method comprising:

• providing a substrate;
• depositing a SiNx layer overlying the substrate;
• performing a high-density (HD) nitrogen plasma process;
• and,
• in response to the HD nitrogen plasma process, enhancing the ratio of N to Si in the SiNx layer.

A method for the nitridation of a substrate, the method comprising:

• providing a substrate;
• performing a high-density (HD) nitrogen plasma process;
• and,
• in response to the HD nitrogen plasma process, performing a nitridation process that forms bonds between the substrate material and nitrogen.

A method for passivating the structure of a substrate, the method comprising:

• providing a substrate;
• performing a high-density (HD) nitrogen plasma process;
• and,
• in response to the HD nitrogen plasma process:
• breaking weak bonds in the substrate material structure;
• and,
• replacing the broken substrate material bonds with nitrogen bonds.