Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality

A method of forming a dielectric film comprising:

• positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor;
• providing a single organosilicon precursor with a built-in organic porogen into said PECVD reactor, said single organosilicon precursor with a built-in organic porogen comprising a silane derivative having the molecular formula SiRR1R2R3, a disiloxane derivative having the molecular formula R4R5R6—Si—O—Si—R7R8R9, or a trisiloxane derivative having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents;
• forming an as-deposited film from said single organsilicon precursor on said substrate, said as deposited film comprising a SiCOH matrix component and an organic porogen component;
• and
• performing a treatment step that substantially removes said organic porogen component from said as deposited film thereby providing a SiCOH dielectric material having a dielectric constant of about 2.7 or lower.