Method of removing a polymer coating from an etched trench
AssigneeSilverbrook Research Pty Ltd
InventorsDarrell McReynolds, Kia Silverbrook
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Abstract
A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180° C.
Claims20
A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer, said method comprising etching said wafer in a biased plasma etching chamber using an O2 plasma, wherein a chamber temperature is in the range of 90 to 180° C.
A method of etching a trench in a silicon wafer, said method comprising the steps of:
- (a) attaching a frontside of said silicon wafer to a handle wafer;
- (b) etching a backside of said wafer using an anisotropic DRIE process to form a trench, said DRIE process including alternating etching and passivation steps, said passivation steps depositing a polymeric coating on sidewalls of said trench;
- (c) removing said polymeric coating by etching said wafer in a biased plasma etching chamber using an O2 plasma,
- wherein said chamber temperature is in the range of 90 to 180° C.
Dependencies are inferred from the claim text.