Trench cut light emitting diodes and methods of fabricating same
AssigneeCree, Inc.
InventorsMichael Bruhns, Brad Williams, Jeff LaHaye, Peter Andrews
Life of this patent
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Abstract
A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
Claims44
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A semiconductor substrate assembly comprising:
- a) a semiconductor substrate having first and second opposed sides;
- b) at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions;
- c) a first trench in the first side of the substrate between the first and second device portions;
- and
- d) a second trench in the second side of the substrate between the first and second device portions.
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A semiconductor substrate assembly comprising:
- a) a semiconductor substrate having a device side;
- b) at least one device layer on the device side of the substrate, the at least one device layer including first and second device portions;
- c) an isolation trench in the at least one device layer, the isolation trench defining a first mesa including the first device portion and a second mesa including the second device portion;
- and
- d) a second trench in the device side of the substrate in and along the isolation trench, the second trench extending between the first and second device portions;
- and
- e) a shaping trench in a side of the substrate opposite the device side.
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Dependencies are inferred from the claim text.