Silicon wafer laser processing method and laser beam processing machine
AssigneeDisco Corporation
InventorsYusuke Nagai, Yukio Morishige, Yosuke Watanabe
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Abstract
A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm.
Claims3
A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein
- the wavelength of the laser beam is set to 1,100 to 2,000 nm.
A laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein
- the laser beam application means comprises a laser beam oscillation means for oscillating a laser beam having a wavelength of 1,100 to 2,000 nm.
Dependencies are inferred from the claim text.