Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
OwnerJohn Snyder, John Larsoninventors
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Abstract
The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.
Claims2
A method for manufacture of a device for regulating the flow of electrical current, the method comprising:
- providing for a semiconductor substrate;
- providing for an electrically insulating layer in contact with the semiconductor substrate, the insulating layer having a dielectric constant greater than 4.0;
- providing for a gate electrode in contact with at least a portion of the insulating layer;
- and
- providing a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
2-96. (canceled)
Dependencies are inferred from the claim text.