Method of forming a split programming virtual ground SONOS memory
AssigneeUnited Microelectronics Corp.
InventorJinsheng Yang
Life of this patent
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Abstract
A method of forming an SPVG SONOS memory. First, a substrate having a well and a plurality of select gate structures is provided. Then, a plurality of sacrificial spacers are formed alongside each select gate structure, and an implantation process is performed to form a doped region in the well between any two adjacent select gate structures. Afterward, the sacrificial spacers are removed, and a composite dielectric layer is formed on the select gate structures and the substrate. Finally, a plurality of word lines are formed on the composite dielectric layer.
Claims16
A method of forming a split programming virtual ground (SPVG) SONOS memory, comprising:
- providing a substrate having at least a first conductive type well positioned in the substrate, and a plurality of select gate structures arranged in parallel and positioned on the first conductive type well;
- forming a plurality of sacrificial spacers alongside each select gate structure;
- performing an implantation process by utilizing the select gate structures and the sacrificial spacers as a mask to form a second conductive type doped region in the first conductive type well between two adjacent select gate structures;
- removing the sacrificial spacers;
- forming a composite dielectric layer covering the select gate structures;
- and
- forming a plurality of word lines perpendicular to the select gate structures on the composite dielectric layer.
A method of forming a dual-bit storage nonvolatile memory, comprising:
- providing a plurality of select gate structures arranged in parallel on the substrate;
- forming a sacrificial spacer alongside each select gate structure;
- performing an implantation process by utilizing the select gate structures and the sacrificial spacers as a mask to form a doped region in the substrate between any two adjacent select gate structures;
- removing the sacrificial spacers;
- forming a composite dielectric layer covering the select gate structures;
- and
- forming a plurality of word lines perpendicular to the select gate structures on the composite dielectric layer.
Dependencies are inferred from the claim text.