Capacitor structure
AssigneeRohm and Haas Electronic Materials LLC
InventorsJohn Cahalen, Maria Rzeznik, John Schemenaur, Rajan Hariharan
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Abstract
Structures including a capacitor dielectric material disposed on the surface of an electrode suitable for use in forming capacitors are disclosed. Methods of forming such structures are also disclosed.
Claims10
A structure comprising an electrode having first and second surface and a capacitor dielectric material disposed on the first surface of the electrode, wherein the first surface of the electrode has an Ra value of ≦200 nm, an Rz(din) value of ≦2000 nm, and a W value of ≦250 nm.
A structure comprising an electrode having first and second surfaces, a barrier layer disposed on the first surface of the electrode and a capacitor dielectric material disposed on the barrier layer, wherein the barrier layer is an electrodeposited nickel layer comprising <3 atomic % of copper.
A structure comprising an electrode comprising a copper conductive layer having first and second surfaces, a barrier layer having a thickness of 0.5 to 2 μm disposed on each of the first and second surfaces of the conductive layer and a capacitor dielectric material disposed on the barrier layer disposed on the first surface of the electrode, wherein each barrier layer is an electrodeposited nickel layer comprising <3 atomic % of copper, and wherein the capacitor dielectric material is chosen from ceramics, metal oxides, polymeric materials and combinations thereof.
A method of forming an electrode structure comprising the steps of providing a metal foil having a first surface, contacting the metal foil with a nickel electroplating bath and applying sufficient anodic potential to deposit a layer of nickel on the first surface of the metal foil wherein the nickel-plated first surface has an Ra value of ≦200 nm, an Rz(din) value of ≦2000 nm, and a W value of ≦250 nm.
Dependencies are inferred from the claim text.