Laser processing unit, laser processing method, and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKoichiro Tanaka, Yoshiaki Yamamoto
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKoichiro Tanaka, Yoshiaki Yamamoto
Estimating the term…
Objects of the present invention is to reduce a number of scanning a linear laser, to shorten the amount of time for laser annealing, and to reduce a manufacturing process, a manufacturing time, and manufacturing cost of a semiconductor device. In this invention, a gas at high temperature is locally blown so as to overlap at an irradiation surface of linear laser light. The linear laser light can be obtained by injecting laser light radiated from a laser oscillator into a lens. The gas at high temperature can be obtained by heating a gas which is compressed using a gas compressor, by a nozzle type heater. The heated has is sprayed so as to overlap with the irradiation surface of the linear laser light.
A laser processing unit comprising:
A laser processing method, in a laser processing unit including a laser oscillator, a lens, and a heater, comprising the steps of:
A method for manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.