Semiconductor device and manufacturing method thereof
AssigneeOki Semiconductor Co., Ltd.
InventorHidetsugu Uchida
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Abstract
An insulating film layer is formed between a channel region of an MOS element formed in a monocrystal silicon layer of an SOS substrate in which the monocrystal silicon layer is laminated on a sapphire substrate, and the sapphire substrate, thereby to bring a stress state of the monocrystal silicon layer on the insulating film layer into a tensile stress state.
Claims7
A semiconductor device comprising:
- an SOS (Silicon On Sapphire) substrate in which a monocrystal silicon layer is laminated on a sapphire substrate;
- and
- a MOSFET (MOS (Metal Oxide Semiconductor) Field Effect Transistor) formed in the monocrystal silicon layer of the SOS substrate,
- wherein an insulating film layer is formed between a channel region of the MOSFET and the sapphire substrate.
A method for manufacturing a semiconductor device wherein a MOSFET is formed in a monocrystal silicon layer of an SOS substrate in which the monocrystal silicon layer is laminated on a sapphire substrate, comprising the steps of:
- selectively forming an insulating film layer in a region for forming a channel of the MOSFET on the sapphire substrate;
- forming an epitaxial layer in a region other than the insulating film layer on the sapphire substrate and forming a silicon layer on the insulating film layer;
- amorphizing the silicon layer and part of the epitaxial layer adjacent to the silicon layer by ion implantation to form an amorphous region;
- and
- monocrystallizing the amorphous region by solid phase epitaxial growth from the epitaxial layer adjacent to the amorphous region to form a silicon crystal layer.
Dependencies are inferred from the claim text.