Point source light-emitting diode and manufacturing method thereof

A method for manufacturing a point source LED, comprising:

• providing a substrate;
• forming an epitaxy structure located on the substrate;
• forming a first electrode on one portion of the epitaxy structure;
• forming an isolation layer on the other portion of the epitaxy structure;
• forming a metal layer on the first electrode and the isolation layer;
• patterning the metal layer to form a contact layer on the first electrode, and to form a bonding layer and a connection bridge on the isolation layer;
• conducting a mesa etching process removing portions of the epitaxy structure to define a light emitting area below the contact layer;
• and
• forming a second electrode, either on the epitaxy structure or on the substrate.

A surface structure of a point source LED, comprising:

• an patterned epitaxy structure having a light emitting area;
• an electrode located on one portion of the patterned epitaxy structure;
• an isolation layer located on the other portion of the patterned epitaxy structure adjacent to the electrode, wherein the isolation layer is connected with the electrode, and a light emitting area can be defined by the combination of the isolation layer and the electrode;
• a contact layer located on one portion of the electrode;
• a bonding layer located on one portion of the isolation layer;
• a connection bridge located on the other portion of the isolation layer, wherein the connection bridge is used to connect the contact layer to the bonding layer, and the connection layer has a width, and the width is less than one half of the diameter of the light emitting area;
• and
• a passive layer exposing one portion of the bonding layer to provide a location for a bonding process.