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OwnerHaruhisa Nakano, Masaaki Hirakawa +1inventors
InventorsHaruhisa Nakano, Masaaki Hirakawa, Hirohiko Murakami
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In forming a carbon nanotube on the surface of a substrate surface by the plasma CVD method in accordance with the prior art, since the substrate is heated by plasma, it is difficult to suitably control the temperature of substrate and thus impossible to form the carbon nanotube at a low temperature. According to the present invention there is provided a method for forming a carbon nanotube comprising steps of introducing a carbon included feedstock gas into a vacuum chamber; generating plasma so that a substrate is not exposed to plasma during a vapor phase growth of the carbon nanotube on a substrate surface; heating the substrate to a predetermined temperature by using a heater; and promoting the growth of the carbon nanotube on the substrate surface with it being contacted by the feedstock gas decomposed by plasma.
A method for forming a carbon nanotube comprising steps of introducing a carbon included feedstock gas into a vacuum chamber;
A plasma CVD apparatus comprising a vacuum chamber within which a substrate stage for laying a substrate thereon and a plasma generating apparatus are arranged, and adapted to promote the vapor phase growth of a carbon nanotube on a surface of the substrate laid on the substrate stage by introducing a carbon included feedstock gas into the vacuum chamber characterized in that the substrate stage is positioned away from a plasma generating region to prevent the substrate from being exposed to plasma generated within the vacuum chamber, and that there is arranged within the vacuum chamber a heating means for heating the substrate to a predetermined temperature.
A plasma CVD apparatus comprising a vacuum chamber within which a substrate stage for laying a substrate thereon and a plasma generating apparatus are arranged, and adapted to promote the vapor phase growth of a carbon nanotube on a surface of the substrate laid on the substrate stage by introducing a carbon included feedstock gas into the vacuum chamber characterized in that a mesh-type shielding means is arranged between a plasma generating region and the substrate laid on the substrate stage to prevent the substrate from being exposed to plasma generated within the vacuum chamber, and that there is arranged within the vacuum chamber a heating means for heating the substrate to a predetermined temperature.
Dependencies are inferred from the claim text.