Method to improve transmittance of an encapsulating film

A method for forming an amorphous carbon layer in a multilayer encapsulating film over a substrate within a substrate processing system, comprising:

• delivering a hydrocarbon-containing precursor for the amorphous carbon layer;
• delivering a hydrogen gas adapted to improve the film uniformity of the amorphous carbon layer into the substrate processing system;
• delivering a silicon-containing precursor and a nitrogen-containing precursor adapted to improve the light transmittance of the amorphous carbon layer to about 80% or higher at all wavelengths of a visible light spectrum into the substrate processing system;
• controlling the temperature of the substrate to a temperature of about 150° C. or lower;
• generating a plasma to deposit the amorphous carbon layer on the surface of the substrate;
• and
• depositing the amorphous carbon layer onto the substrate until a desired thickness of the amorphous carbon layer is obtained.

A method for depositing an encapsulating layer, having one or more layers of silicon-containing inorganic barrier materials and carbon-containing materials, onto a substrate in a substrate processing system, comprising:

• delivering a first mixture of precursors for a silicon-containing inorganic barrier layer and delivering a hydrogen gas into the substrate processing system;
• controlling the temperature of the substrate to a temperature of about 150° C. or lower;
• generating a plasma to deposit the silicon-containing inorganic barrier layer on the surface of the substrate;
• delivering a second mixture of precursors for a carbon-containing material layer and delivering a hydrogen gas into the substrate processing system, the second mixture of precursors comprising a hydrocarbon-containing precursor, a silicon-containing precursor, and a nitrogen-containing precursor;
• controlling the temperature of the substrate to a temperature of about 150° C. or lower;
• generating a plasma to deposit the carbon-containing material layer onto the surface of the silicon-containing inorganic barrier layer;
• and
• depositing the encapsulating layer onto the substrate by repeating the above mentioned steps until a thickness of the encapsulating layer of about 15,000 angstroms or more is obtained.

A method for forming an amorphous carbon layer in a multilayer encapsulating film over a substrate within a substrate processing system, comprising:

• delivering a hydrocarbon-containing precursor at a first flow rate for the amorphous carbon layer;
• delivering a hydrogen gas adapted to improve the film uniformity of the amorphous carbon layer into the substrate processing system;
• delivering a silicon-containing precursor at a second flow rate and a nitrogen-containing precursor at a third flow rate into the substrate processing system;
• controlling the temperature of the substrate to a temperature of about 150° C. or lower;
• and
• generating a plasma inside the substrate processing system for a time period to deposit the amorphous carbon layer on the surface of the substrate, wherein the ratio of the first flow rate and the second flow rate is 4:1 or larger.