InGaN LED pumped II-VI semiconductor laser
OwnerSergei Govorkov, Luis Spinelliinventors
Life of this patent
Estimating the term…
Abstract
An optically pumped semiconductor laser in accordance with the present invention includes a II-VI semiconductor laser chip A plurality of InGaN LEDs provides optical pump light for optically pumping the laser chip. An optical arrangement collects the pump light from the LEDs and directs the pump light to light-concentrating optical device that is either directly or indirectly in optical contact with the laser chip and is arranged to concentrate the pump light on the chip with maximized numerical aperture (NA). In one example of the laser, the light-concentrating device is an immersion lens. In another example of the laser, the light-concentrating device is a tapered light-pipe.
Claims43
An optically pumped semiconductor laser, comprising:
- a transparent refractive medium;
- a II-VI semiconductor laser chip having a pump-light-receiving surface thereof optically immersed in said refractive medium;
- a plurality of InGaN LEDs for providing optical pump light;
- and
- wherein the refractive medium is configured such that the pump-light directed thereto is concentrated thereby on said pump-light-receiving surface of said semiconductor laser chip.
An optically pumped semiconductor laser, comprising:
- a plurality of InGaN LEDs for providing optical pump light;
- a II-VI semiconductor laser chip having a pump-light-receiving surface;
- and
- an optical arrangement for concentrating said optical pump light on said pump-light-receiving surface of said semiconductor laser chip, said optical arrangement including an immersion lens having positive optical power and being in optical contact with said pump light receiving surface.
An optically pumped semiconductor laser, comprising:
- first and second pluralities of InGaN LEDs for providing optical pump light;
- a II-VI semiconductor laser chip having first and second pump-light-receiving surfaces;
- a first optical arrangement for concentrating optical pump light from said first plurality of LEDs on said first pump-light-receiving surface of said semiconductor laser chip, and a second optical arrangement for concentrating optical pump light from said second plurality of LEDs on said second pump-light-receiving surface of said semiconductor laser chip;
- and
- ein, said first optical arrangement includes a plano-convex lens element having a concave surface and a plane surface, and said plane surface of said plano-convex lens is in optical contact with said first pump-light-receiving surface of said semiconductor laser chip.
An optically pumped semiconductor laser, comprising:
- a plurality of InGaN LEDs for providing optical pump light;
- a surface emitting II-VI semiconductor laser chip including a gain structure surmounted by a mirror structure and having a pump-light-receiving surface;
- and
- an optical arrangement for concentrating said optical pump light on said pump-light-receiving surface of said semiconductor laser chip, said optical arrangement including an immersion lens having positive optical power and being in optical contact with said pump light receiving surface;
- and
- at least one mirror separate from said semiconductor laser chip, said mirror and said mirror structure of said semiconductor laser chip terminating a laser resonator, with said gain structure of said semiconductor laser chip being located in said laser resonator.
An optically pumped semiconductor laser, comprising:
- a plurality of InGaN LEDs for providing optical pump light;
- a II-VI semiconductor laser chip having a pump-light-receiving surface;
- and
- an optical arrangement for concentrating said optical pump light on said pump-light-receiving surface of said semiconductor laser chip, said optical arrangement including a light-pipe having an interior of a refractive medium, said light-pipe having an entrance end for receiving said pump light and an exit end, said light-pipe having a greater dimension at said entrance end than at said exit end, and said pump-light-receiving surface of said semiconductor laser chip being at said exit end of said light-pipe and in optical contact with said refractive medium.
An optically pumped semiconductor laser, comprising:
- a II-VI semiconductor laser chip arranged to generate laser radiation when irradiated by optical pump light;
- at least one InGaN LED for providing said optical pump light;
- and
- wherein said plurality of LEDs provides said optical pump light as a sequence of optical pulses, whereby said laser radiation is generated as a corresponding sequence of laser radiation pulses.
An optically pumped semiconductor laser, comprising:
- a transparent refractive medium;
- a II-VI semiconductor laser chip having a pump-light-receiving surface thereof optically immersed in said refractive medium;
- at least one InGaN LED for providing optical pump light;
- and
- wherein the refractive medium is configured such that the pump-light directed thereto is concentrated thereby on said pump-light-receiving surface of said semiconductor laser chip.
An optically pumped semiconductor laser, comprising:
- first and second pluralities of InGaN LEDs for providing optical pump light;
- a II-VI semiconductor laser chip having first and second pump-light-receiving surfaces;
- a first optical arrangement for concentrating optical pump light from said first plurality of LEDs on said first pump-light-receiving surface of said semiconductor laser chip, and a second optical arrangement for concentrating optical pump light from said second plurality of LEDs on said second pump-light-receiving surface of said semiconductor laser chip;
- and
- wherein, said first optical arrangement includes a transparent refractive medium configured such that the pump-light directed thereto is concentrated thereby on said first pump-light-receiving surface of said semiconductor laser chip.
Dependencies are inferred from the claim text.