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US 2006/0078026 A1Published application
AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
AssigneeFinisar Corporation
InventorHoki Kwon
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Abstract
Distributed Bragg reflector (DBR) with reduced DX centers. A DBR includes an AlAs region. The AlAs region includes essentially homogeneous AlAs. The DBR further includes a AlGaAs region. The AlGaAs region includes alternating thin layers of AlAs and GaAs. The alternating thin layers of AlAs and GaAs are arranged such the the AlGaAs region appears as a layer of AlGaAs with appropriate concentrations of Al and Ga.
Claims22
A distributed Bragg reflector (DBR) comprising:
- an AlAs region that comprises a layer of AlAs;
- an AlGaAs region that comprises:
- a plurality of thin AlAs layers;
- and
- a plurality of thin GaAs layers alternating with the AlAs layers,
- wherein the thin AlAs layers and thin GaAs layers appear in a far field to behave as an AlGaAs layer with appropriate concentrations of Al and Ga.
3 more elements
A method of making a distributed Bragg reflector (DBR) comprising:
- forming an AlAs region that comprises a layer of AlAs;
- forming an AlGaAs region where forming an AlGaAs region comprises:
- forming a plurality of thin AlAs layers;
- and
- forming a plurality of thin GaAs layers alternating with the AlAs layers, wherein the thin AlAs layers and thin GaAs layers appear in a far field to behave as an AlGaAs layer with appropriate concentrations of Al and Ga.
2 more elements
Dependencies are inferred from the claim text.