Ridge waveguide semiconductor laser and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorShuji Itonaga
Life of this patent
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Abstract
A substrate, a laminated structure formed above the substrate and including a first cladding layer, an active layer, and a second cladding layer each containing a compound semiconductor, a current confinement layer containing a compound semiconductor, which is formed on the second cladding layer so as to have an opening, and a ridge portion containing a compound semiconductor, covering the opening of the current confinement layer, and electrically connecting to the second cladding layer, are provided. At least an edge portion of the current confinement layer facing the opening is located under the ridge portion.
Claims20
A ridge waveguide semiconductor laser comprising:
- a substrate;
- a laminated structure formed above the substrate and including a first cladding layer, an active layer, and a second cladding layer each containing a compound semiconductor;
- a current confinement layer containing a compound semiconductor, which is formed on the second cladding layer so as to have an opening;
- and
- a ridge portion containing a compound semiconductor, covering the opening of the current confinement layer, and electrically connecting to the second cladding layer,
- at least an edge portion of the current confinement layer which faces the opening being located under the ridge portion.
A ridge waveguide semiconductor laser comprising:
- a substrate;
- a laminated structure formed above the substrate and including a first cladding layer, an active layer, and a second cladding layer;
- a current confinement layer formed on the second cladding layer so as to have an opening;
- a ridge portion covering the opening of the current confinement layer and electrically connecting to the second cladding layer;
- and
- a dummy ridge portion provided on the current confinement layer so as to have a predetermined space between the ridge portion and the dummy ridge portion,
- at least an edge portion of the current confinement layer which faces the opening being located under the ridge portion.
A method of manufacturing a ridge waveguide semiconductor laser comprising:
- sequentially forming a first cladding layer, an active layer, and a second cladding layer above a substrate;
- forming an etching stopper layer on the second cladding layer;
- patterning the etching stopper layer to form an opening through the etching stopper layer;
- forming a third cladding layer covering the etching stopper layer and the opening;
- forming a contact layer on the third cladding layer;
- and
- forming a mask used to form a ridge portion on the contact layer above the opening of the etching stopper layer, and etching the contact layer and the third cladding layer using the mask to form the ridge portion.
Dependencies are inferred from the claim text.