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US 2006/0078023 A1Published application
Laser diode and method of fabricating the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorDae-ho Lim
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Abstract
A laser diode and a method of fabricating the same are provided. An embodiment of the laser includes a substrate; at least one material layer formed on the substrate and having a current passing region and a current block region which is composed of oxide and disposed at both sides of the current passing region; and a laser oscillating layer formed on the material layer.
Claims21
A laser diode comprising:
- a substrate;
- at least one material layer formed on the substrate, and including a current passing region and a current block region composed of oxide and disposed at both sides of the current passing region;
- and
- a laser oscillating layer formed on the material layer.
1 more element
A method of fabricating a laser diode comprising:
- forming an n-GaAs buffer layer on an n-GaAs substrate;
- forming at least one n-AlxGa1-xAs layer (0.5≦x≦1) on the n-GaAs buffer layer;
- sequentially forming an n-InGaAlP lower clad layer, an InGaP active layer, a p-InGaAlP upper clad layer, a p-InGaP highly conductive layer, and a p-GaAs cap layer;
- oxidizing both sides of the n-AlxGa1-xAs layer, thereby forming a current block region;
- and
- forming an n-electrode and a p-electrode below the n-GaAs substrate and on the p-GaAs cap layer respectively.
3 more elements
Dependencies are inferred from the claim text.