Phase-change information recording medium, manufacturing method for the same, sputtering target, method for using the phase-change information recording medium and optical recording apparatus

A sputtering target comprising:

• a composition expressed by following Formula 1, wherein the sputtering target is used for manufacturing the phase-change recording layer.
• SnαSbβGaγGeδTeε−Xζ
• In above Formula 1, X represents at least one element selected from Ag, Zn, In and Cu. α, β, γ, δ, ε and ζ represent composition ratio (atomic percent) of each element and are expressed as follows:
• 5≦α≦25, 40≦β≦91, 2≦γ≦20, 2≦δ≦20, 0≦ε10, 0≦ζ≦10 and α+β+γ+δ+ε+ζ=100

A manufacturing method for the phase-change information recording medium comprising:

• phase-change recording layer forming to form the phase-change recording layer by sputtering using the sputtering target comprising:
• a composition expressed by following Formula 1,
• wherein the sputtering target is used for manufacturing the phase-change recording layer.
• SnαSbβGaγGeδTeε−Xζ [Formula 1]
• In above Formula 1, X represents at least one element selected from Ag, Zn, In and Cu. α, β, γ, δ, ε and ζ represent composition ratio (atomic percent) of each element and are expressed as follows:
• 5≦α≦25, 40≦β≦91, 2≦γ≦20, 2≦δ≦20, 0≦ε≦10, 0≦ζ≦10 and α+β+γ+δ+ε+ζ=100,
• wherein the phase-change information recording medium comprising:
• at least a first protective layer, a phase-change recording layer, a second protective layer and a reflective layer disposed on the substrate in one of this sequence and reverse sequence.

A method for using the phase-change information recording medium, wherein at least one of recording, reproducing, erasing and rewriting of information is performed by irradiating the laser beam from the first protective layer side of the phase-change information recording medium comprising:

• a substrate, and
• at least a first protective layer, a phase-change recording layer, a second protective layer, and a reflective layer disposed on the substrate in one of this sequence and reverse sequence,
• wherein the phase-change recording layer comprises a composition expressed by following Formula 1.
• SnαSbβGaγGeδTeε−Xζ [Formula 1]
• In above Formula 1, X represents at least one element selected from Ag, Zn, In and Cu. α, β, γ, δ, ε and ζ respectively represent composition ratio (atomic percent) of each element and are expressed as follows:
• 5≦α≦25, 40≦β≦91, 2≦γ≦20, 2≦δ≦20, 0≦ε≦10, 0≦ζ≦10 and α+β+γ+δ+ε+ζ=100.

An optical recording apparatus wherein at least one of recording, reproducing, erasing and rewriting of information is performed by irradiating the laser beam from laser beam source to the phase-change information recording medium and the phase-change information recording medium is the phase-change information recording medium comprising:

• a substrate, and
• at least a first protective layer, a phase-change recording layer, a second protective layer, and a reflective layer disposed on the substrate in one of this sequence and reverse sequence,
• wherein the phase-change recording layer comprises a composition expressed by following Formula 1.
• SnαSbβGaγGeδTeε−Xζ [Formula 1]
• In above Formula 1, X represents at least one element selected from Ag, Zn, In and Cu. α, β, γ, δ, ε and ζ respectively represent composition ratio (atomic percent) of each element and are expressed as follows:
• 5≦α≦25, 40≦β≦91, 2≦γ≦20, 2≦δ≦20, 0≦ε≦10, 0≦ζ≦10 and α+β+γ+δ+ε+ζ=100.