Multilevel phase-change memory, operating method and manufacture method thereof
AssigneeIndustrial Technology Research Institut
InventorsChien-Ming Li, Wen-Han Wang, Kuei-Hung Shen
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Abstract
A multilevel phase-change memory, operating method and manufacturing method thereof. The phase-change memory includes two phase-change layers and electrodes, which are configured in a parallel structure to form a memory cell. A voltage-drive mode is employed to control and drive the memory such that multilevel memory states may be achieved by imposing different voltage levels. The provided multilevel phase-change memory has more bits and higher capacity than that of the memory with a single phase-change layer.
Claims26
A phase change memory comprising:
- a first phase change layer having a crystalline state and an amorphous state;
- a second phase change layer having a crystalline state and an amorphous state;
- a first top electrode and a second top electrode formed on one surface of the first phase change layer and the second phase change layer respectively for delivering electrical signals to change the states of the first phase change layer and the second phase change layer;
- and
- at least one bottom electrode formed on another surface of the first phase change layer and the second phase change layer.
A manufacture method for fabricating a phase change memory comprising:
- providing a substrate, in which a metal contact is formed;
- forming a bottom electrode on the substrate;
- forming a phase change layer on the bottom electrode;
- implanting ions on one portion of the phase change layer to form a first phase change layer a second phase change layer;
- and
- forming a first top electrode a second top electrode on the corresponding first phase change layer and second phase change layer.
A manufacture method for fabricating a phase change memory comprising:
- providing a substrate, in which a metal contact is formed;
- forming a bottom electrode on the substrate;
- forming a first phase change layer a second phase change layer on the bottom electrode;
- and
- forming a first top electrode a second top electrode on the corresponding first phase change layer and second phase change layer.
Dependencies are inferred from the claim text.