Methods of accelerated life testing of programmable resistance memory elements
AssigneeOvonyx, Inc.
InventorsSergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj
Life of this patent
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Abstract
A method of testing a programmable resistance memory element. The method comprises applying a plurality of reset pulses to the memory element. Each of the reset pulses having an energy which is greater than the minimum energy needed program the memory element from its set state to its reset state.
Claims54
A method of operating an electrically programmable, phase-change memory element, said memory element having at least a low resistance state and a high resistance state, said method comprising:
- providing said memory element;
- and
- applying a plurality of first-type pulses of energy to said memory element, each of said first-type pulses being sufficient to program said memory element from said low resistance state to said high resistance state, each of said first-type pulses having an energy which is greater than the minimum energy needed to program said memory element from said low resistance state to said high resistance state.
A method of operating an electrically programmable, phase-change memory element, said memory element having at least a low resistance state and a high resistance state, said method comprising:
- providing said memory element;
- and
- applying a plurality of energy cycles to said memory element, each of said cycles comprising a first-type pulse of energy followed by a second-type pulse of energy, said first-type pulse being sufficient to program said memory element from said low resistance state to said high resistance state, said first-type pulse having an energy which is greater than the minimum energy needed to program said memory element from said low resistance state to said high resistance, said second-type pulse being sufficient to program said memory element from said high resistance state to said low resistance state.
A method of operating an electrically programmable, phase-change memory element, said memory element having at least a low resistance state and a high resistance state, said method comprising:
- providing said memory element;
- and
- applying a plurality of energy pulses to said memory element, each of said energy pulses being sufficient to program said memory element from said high resistance state to said low resistance state, each of said energy pulses having an energy which is greater than the minimum energy needed to program said memory element from said high resistance state to said low resistance state.
A method of operating a programmable resistance memory element, said memory element having at least a set state and a reset state, said method comprising:
- providing said programmable resistance memory element;
- and
- applying a plurality of reset pulses to said memory element, each of said reset pulses having an energy which is greater than the minimum energy needed to program said memory element from said set state to said reset state.
A method of operating a programmable resistance memory element, said memory element having at least a set state and a reset state, said method comprising:
- providing said programmable resistance memory element;
- and
- applying a plurality of energy cycles to said memory element, each of said cycles comprising a reset pulse followed by a set pulse, said reset pulse having an energy which is greater than the minimum energy needed to program said memory element from said set state to said reset state.
A method of operating a programmable resistance memory element, said memory element having at least a set state and a reset state, said method comprising:
- providing said memory element;
- and
- applying a plurality of set pulses to said memory element, each of said set pulses having an energy which is greater than the minimum energy needed to program said memory element from said reset state to said set state.
Dependencies are inferred from the claim text.