Integrated circuit including sensor to sense environmental data, and system for testing

An MRAM circuit comprising:

• a row line;
• a column line;
• an MRAM cell proximate the row line and column line and switchable between first and second states in response to current imparted to at least one of the row line and column line, wherein, in operation, current imparted to the row line in one direction causes a magnetic field on the MRAM cell biasing the MRAM cell toward the second state, and wherein current imparted to the column line in one direction causes a magnetic field on the MRAM cell biasing the MRAM cell toward the second state;
• first circuitry configured to impart a selectable amount of current to the row line;
• second circuitry configured to impart a selectable amount of current to the column line;
• a magnetic sensor proximate the MRAM cell and configured to sense magnetic field;
• a temperature sensor proximate the MRAM cell and configured to sense temperature;
• and
• third circuitry coupled to the magnetic sensor, the temperature sensor, and the first circuitry and second circuitry to selectively adjust the amount of current imparted to the row line in response to the magnetic field sensed by the magnetic sensor and temperature sensed by the temperature sensor and to the column line in response to the magnetic field sensed by the magnetic sensor and temperature sensed by the temperature sensor.

An MRAM integrated circuit comprising:

• a plurality of row lines configured to have current of a selectable magnitude flow therethrough in selectable directions;
• a plurality of column lines configured to have current of a selectable magnitude flow therethrough in selectable directions;
• a plurality of MRAM cells located proximate intersections of row lines and column lines, respectively, and respectively switchable between first and second binary states in response to current flow in the row line and column line at the intersection proximate the MRAM cell to be switched, depending on the direction and magnitude of the current in the row line and column line;
• first circuitry configured to select a row line and cause a selectable amount of current to flow through the selected row line;
• second circuitry configured to select a column line and cause a selectable amount of current to flow through the selected column line;
• a magnetic sensor proximate at least one of the MRAM cells and configured to sense a level of a magnetic field at the at least one MRAM cell;
• and
• third circuitry coupled to the magnetic sensor and at least one of the first circuitry and second circuitry to selectively adjust the current flowing through the selected row line and selected column line in response to the level sensed by the magnetic sensor.