Radiation tolerant electrical component with non-radiation hardened FET
OwnerSteven Summerinventor
Life of this patent
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Abstract
A radiation tolerant electrical component is provided without a radiation hardened material FET. A p-channel MOSFET provides switching capabilities in radiated environments because its gate voltage starts at a negative value and becomes more negative with exposure to radiation. Therefore, the gate is still controllable when exposed to radiation.
Claims3
1-23. (canceled)
A radiation tolerant electrical component for providing controlled electrical response in radiation-intensive applications, the component comprising:
- an input line;
- an output line;
- a drive circuit, the drive circuit capable of transmitting a negative gate drive signal;
- and
- a non-hardened p-channel FET having a drain, a gate, and a source, the FET having a negative initial threshold voltage and a maximum gate voltage signal;
- whereby, when operating the electrical component in a radiation-intensive environment, the FET operates at close to the maximum gate voltage signal of the FET thereby allowing the FET to function across a high range of radiation exposure.
A radiation tolerant electrical component for providing controlled electrical response in radiation-intensive applications, the component comprising:
- an input line;
- an output line;
- a drive circuit, the drive circuit capable of transmitting a negative gate drive signal;
- and
- a non-hardened p-channel FET having a drain, a gate, and a source, the FET having a negative initial threshold voltage and a maximum gate voltage;
- whereby, when operating the electrical component in a radiation-intensive environment, the FET remains controllable even if the FET operates below the maximum gate voltage of the FET.
Dependencies are inferred from the claim text.