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US 2006/0077598 A1Published application
Resistor having a predetermined temperature coefficient
AssigneeAllegro MicroSystems, LLC
InventorsWilliam Taylor, Michael Doogue
Life of this patent
Estimating the term…
Abstract
A material stack has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field. The electrical resistance of the material stack has a temperature coefficient generally the same as a magnetoresistance element.
Claims12
A material stack comprising:
- an antiferromagnetic layer;
- a first pinned layer disposed over the antiferromagnetic layer;
- a non-magnetic layer disposed over the pinned layer;
- and
- a second pinned layer disposed over the non-magnetic layer, wherein the material stack has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field, and wherein the electrical resistance has a temperature coefficient generally the same as a temperature coefficient of a magnetoresistance element.
2 more elements
A circuit comprising:
- a magnetoresistance element;
- and
- a material stack coupled to the magnetoresistance element, comprising:
- an antiferromagnetic layer;
- a first pinned layer disposed over the antiferromagnetic layer;
- a non-magnetic layer disposed over the pinned layer;
- and
- a second pinned layer disposed over the non-magnetic layer, wherein the material stack has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field, and wherein the electrical resistance has a temperature coefficient generally the same as a temperature coefficient of a magnetoresistance element.
5 more elements
Dependencies are inferred from the claim text.