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US 2006/0077583 A1Published application
Storage device
AssigneeSony Corporation
InventorsKenichi Satori, Kenichi Nakanishi, Hideaki Bando, Takahiro Fukushige
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AssigneeSony Corporation
InventorsKenichi Satori, Kenichi Nakanishi, Hideaki Bando, Takahiro Fukushige
Estimating the term…
The present invention has been made to realize a storage device capable of normally reading out data from the erase processing applied area. In a semiconductor storage device 1, when data read processing is performed for the erase-processing applied area in a memory section 2 to read out erase-state actual data Ddr and erase-state parity data Ddp each containing only “1s”, the erase-state actual data Ddr and erase-state parity data Ddp are inverted by a third data inverting circuit 13 to make all the values thereof “0”, followed by execution of the error detection processing. With the above configuration, it is possible to prevent an error from being detected in the error detection processing.
A storage device having storage means for storing data and error detection data for detecting an error in the data, and error detection means for performing error detection processing for detecting whether there is an error in readout data based on the error detection data corresponding to the data read out from the storage means, comprising
A storage device having a storage unit that stores data and error detection data for detecting an error in the data, and an error detection unit that performs error detection processing for detecting whether there is an error in readout data based on the error detection data corresponding to the data read out from the storage unit, comprising
Dependencies are inferred from the claim text.