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AssigneeHitachi High-Technologies Corporation
InventorsTatehito Usui, Motohiko Yoshigai, Kazuhiro Jyouo, Tetsuo Ono
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A semiconductor fabricating apparatus for etching a semiconductor wafer, which is placed in a chamber and which has a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber. The semiconductor fabricating apparatus includes a light detector that detects a change in an amount of light with a plurality of wavelengths obtained from the surface of the wafer for a predetermined time during which the second film is etched, and a detection unit that detects a thickness of the first film based on a specific waveform obtained from an output of the detector.
A semiconductor fabricating apparatus for etching a semiconductor wafer, placed in a chamber and having a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber, said semiconductor fabricating apparatus comprising:
A semiconductor fabricating apparatus for etching a semiconductor wafer, placed in a chamber and having a multiple-layer film composed of an oxide film formed on a surface thereof and a film formed on the oxide film, using plasma generated in the chamber, said semiconductor fabricating apparatus comprising:
Dependencies are inferred from the claim text.