Surface acoustic wave device and its fabrication method

Abstract

A thin film layered surface acoustic wave device includes a substrate, a GaN piezoelectric film, an AlN piezoelectric film and interdigital transducer electrodes. The GaN piezoelectric film is deposited on the substrate by chemical vapor deposition (CVD) or physical vapor deposition (PVD) method. Then the AlN piezoelectric film is deposited on top surface of the GaN piezoelectric film by the same way. Finally, the interdigital transducer electrodes are deposited on top surface of AlN piezoelectric film and form by etching of lift off method. Accordingly, high operating frequency and low loss surface acoustic wave devices can be produced which can be integrated with high frequency devices, such as HBT and HEMT, and different devices.

Dependencies are inferred from the claim text.