Virtual ground memory array and method therefor

A method of making a semiconductor device, the method comprising:

• forming a first layer over a semiconductor material;
• forming openings in the first layer;
• introducing dopants into the semiconductor material through the opening;
• forming a dielectric structure, wherein the forming the dielectric structure includes:
• depositing a layer of dielectric material over the first layer after forming the openings;
• planarizing the dielectric material, wherein the planarizing leaves dielectric material in the opening;
• removing the first layer after the planarizing;
• forming a conductive line over the dielectric structure.

A method of making a memory device, the method comprising:

• forming a first layer over semiconductor material;
• forming openings in the first layer;
• forming current electrode regions in the semiconductor material, wherein the forming current electrode regions includes introducing dopants into the semiconductor material through the openings;
• forming dielectric structures, wherein the forming dielectric structures includes forming dielectric material in the openings;
• forming a layer of charge storing material over the dielectric structures;
• forming word lines over the layer of charge storing material and over the dielectric structures.

A memory device comprising:

• a current terminal region in a semiconductor material;
• a dielectric structure over the current terminal region, the dielectric structure having opposing side walls;
• a charge storing structure over the dielectric structure;
• a word line over the charge storing structure and over the dielectric structure.