Semiconductor device and method of fabrication
AssigneeSpansion LLC
InventorsMasahiko Higashi, Hiroyuki Nansei
Life of this patent
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Abstract
A semiconductor memory device employs a SONOS type memory architecture and includes a bit line diffusion layer in a shallow trench groove in which a conductive film is buried. This makes it possible to decrease the resistivity of the bit line diffusion layer without enlarging the area on the main surface of the semiconductor substrate, and to fabricate the semiconductor memory device having stable electric characteristics without enlarging the cell area. The bit line is formed by implanting ions into the sidewall of Si3N4.
Claims20
A semiconductor device comprising:
- a buried bit line structure having a groove in which a bit line is buried;
- and
- a conductive layer on an inner surface of the groove.
A method of fabricating a semiconductor device comprising the steps of:
- defining a buried bit line region on a main surface of a semiconductor substrate by an isolation process;
- forming a groove in the buried bit line region;
- forming a conductive layer on an inner surface of the groove;
- and
- burying a conductive film in the groove.
A method of fabricating a semiconductor process comprising the steps of:
- forming electrodes extending in a column direction on a semiconductor substrate;
- forming sidewalls of silicon nitride on side walls of the electrodes;
- implanting ions into the semiconductor substrate with a mask provided by the sidewalls of silicon nitride so that bit lines are self-aligned;
- forming word lines extending in a row direction on the semiconductor substrate;
- and
- removing portions of the electrodes extending in the column direction, which portions are located in a region in which the word lines are not provided, so that the electrodes are divided into parts.
Dependencies are inferred from the claim text.