Semiconductor memory device

A semiconductor memory device comprising:

• an interlayer insulating film formed on a semiconductor substrate;
• a plurality of contact plugs formed in the interlayer insulating film and one ends electrically connected to the semiconductor substrate;
• a plurality of ferroelectric capacitors formed on the interlayer insulating film, said each ferroelectric capacitor comprising a first electrode, a ferroelectric film and a second electrode electrically connected to the other end of said each contact plug;
• an insulating film which covers the plurality of ferroelectric capacitors and has openings that expose the first electrodes;
• and
• a wiring film which collectively covers the plurality of ferroelectric capacitors and the insulating film and electrically connects the first electrodes exposed through the openings to one another, said wiring film consisting of a material having conductivity and even a hydrogen diffusion preventing function.

A semiconductor memory device comprising:

• an interlayer insulating film formed on a semiconductor substrate;
• a plurality of contact plugs formed in the interlayer insulating film and having one ends electrically connected to the semiconductor substrate;
• a plurality of ferroelectric capacitors formed on the interlayer insulating film and each comprising a first electrode, a ferroelectric film and a second electrode electrically connected to the other end of said each contact plug, said ferroelectric capacitors being arranged on the interlayer insulating film along row and column directions;
• an insulating film which covers the plurality of ferroelectric capacitors and has openings that expose the first electrodes;
• and
• a wiring film which collectively covers the plurality of ferroelectric capacitors and the insulating film for each column and electrically connects the first electrodes exposed through the openings to one another for each column, said wiring film consisting of a material having conductivity and even a hydrogen diffusion preventing function.

A semiconductor memory device comprising:

• an interlayer insulating film formed on a semiconductor substrate;
• a plurality of contact plugs formed in the interlayer insulating film and having one ends electrically connected to the semiconductor substrate;
• a plurality of ferroelectric capacitors formed on the interlayer insulating film and each comprising a first electrode, a ferroelectric film and a second electrode electrically connected to the other end of said each contact plug, said ferroelectric capacitors being arranged on the interlayer insulating film along row and column directions;
• an insulating film which covers the plurality of ferroelectric capacitors and has openings that expose the first electrodes;
• and
• a wiring film which collectively covers the plurality of ferroelectric capacitors and the insulating film every plural columns and electrically connects the first electrodes exposed through the openings to one another every plural columns, said wiring film consisting of a material having conductivity and even a hydrogen diffusion preventing function.