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US 2006/0076592 A1Published application
Integratable polarization rotator
AssigneeIntel Corporation
InventorsMichael Salib, Dmitri Nikonov
Life of this patent
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Abstract
Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the substrate, a first doped layer on the ferromagnetic semiconductor layer, and a second doped layer on the first doped layer.
Claims17
(canceled)
A device, comprising:
- a substrate;
- a ferromagnetic semiconductor layer on the substrate;
- a first doped layer on the ferromagnetic semiconductor layer;
- a second doped layer on the first doped layer;
- a first contact on the second doped layer, wherein there is not a magnetic layer between the first contact and the second doped layer;
- and
- a second contact on the ferromagnetic semiconductor layer
4 more elements
A device, comprising:
- a substrate;
- a ferromagnetic semiconductor layer on the substrate;
- a first doped layer on the ferromagnetic semiconductor layer;
- a second doped layer on the first doped layer;
- a multilayer heterostructure between the first and second doped layers, wherein the first and second doped layers and the heterostructure comprise a vertical structure;
- a first contact on the second doped layer and a second contact on the ferromagnetic semiconductor layer, the second contact being adjacent a first side of the vertical structure;
- and
- a third contact on the ferromagnetic layer, the third contact being adjacent a second side of the vertical structure.
5 more elements
A device, comprising:
- a substrate;
- a ferromagnetic semiconductor layer on the substrate, wherein the ferromagnetic semiconductor layer comprises manganese, gallium, and arsenic;
- a first doped layer on the ferromagnetic semiconductor layer, wherein the first doped layer comprises aluminum, gallium, and arsenic;
- a second doped layer on the first doped layer;
1 more element
A device, comprising:
- a substrate;
- a ferromagnetic semiconductor layer on the substrate, wherein the ferromagnetic semiconductor layer comprises manganese, silicon, and germanium;
- a first doped layer on the ferromagnetic semiconductor layer, wherein the first doped layer comprises silicon and germanium;
- a second doped layer on the first doped layer;
1 more element
-31. (canceled)
Dependencies are inferred from the claim text.