PIN photodiode structure and fabrication process for reducing dielectric delamination
AssigneeEmcore Corporation
InventorsXiang Gao, Alex Ceruzzi, Steve Schwed, Linlin Liu, Mark Gottfried
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Abstract
A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.
Claims14
A PIN photodiode comprising:
- a substrate;
- a first type electrode layer disposed on the substrate;
- an intrinsic layer, including a first lower region having a first length, and a second upper region having a second length, smaller than the first length, disposed over a portion of the first-type electrode layer;
- a second type electrode layer disposed over at least a portion of the intrinsic layer so as to form a mesa shaped structure;
- and
- a passivation layer disposed over the mesa shaped structure.
A PIN photodiode comprising:
- a semi-insulating substrate;
- an n-type electrode layer disposed on the substrate;
- an intrinsic layer, including a first lower region having a first lateral length, and a second upper region having a second lateral length, smaller than the first length, said intrinsic layer being disposed over a portion of the n-type cathode layer;
- a p-type electrode layer disposed over at least a portion of the intrinsic layer;
- and
- a passivation layer disposed over the p-type electrode layer, the intrinsic layer, and the n-type electrode layer.
A vertical PIN photodiode comprising:
- a substrate;
- a first type electrode layer disposed on the substrate;
- an intrinsic layer disposed on the first type electrode layer;
- a second type electrode layer disposed over the intrinsic layer;
- a trench etched through the electrode and intrinsic layers into the substrate;
- a layer of passivation material disposed over the second type electrode layer and in the trench.
A method of manufacturing a PIN photodiode to reduce dielectric delamination comprising:
- providing a substrate;
- forming an first type electrode layer on the substrate;
- forming an intrinsic layer on the first type electrode layer;
- forming a second type electrode layer on the intrinsic layer;
- etching the second type electrode layer to define a mesa shaped structure;
- and
- depositing a passivation material over the mesa shaped structure.
A method of manufacturing a PIN photodiode to reduce the dielectric delamination comprising;
- providing a substrate;
- forming a first type electrode layer on the substrate;
- forming an intrinsic layer on the first type electrode layer;
- forming a second type electrode layer on the intrinsic layer;
- etching a trench through the second type electrode layer on the intrinsic layer, the first type electrode layer, and to define an enclosed region forming a PIN diode;
- and
- depositing a passivation material in the trench.
Dependencies are inferred from the claim text.