Semiconductor resistor and method for manufacturing the same

A method for manufacturing a semiconductor resistor,

• wherein the semiconductor resistor is formed on a substrate on which an active device is formed,
• the active device includes:
• a channel layer;
• a Schottky layer formed on the channel layer and made of undoped AlGaAs or undoped GaAs;
• and a contact layer formed on the Schottky layer, and
• said method comprises:
• isolating a part of the contact layer from the active device by forming a photoresist pattern on the contact layer and removing a predetermined area of the contact layer using the photoresist pattern;
• forming an active region including a part of the Schottky layer and a part of the channel layer, both of which are isolated from the active device by a device isolation region formed in the Schottky layer and the channel layer by implanting ions using a photoresist pattern;
• forming two ohmic electrodes on the contact layer isolated from the active device;
• removing a predetermined area of the contact layer isolated from the active device so that the Schottky layer isolated from the active device is exposed between the two ohmic electrodes;
• and
• sulfurating an exposed area of the Schottky layer between the two ohmic electrodes.

A method for manufacturing a semiconductor resistor,

• wherein the semiconductor resistor is formed on a substrate on which an active device is formed,
• the active device includes:
• a channel layer;
• a Schottky layer formed on the channel layer and made of undoped AlGaAs or undoped GaAs;
• and a contact layer formed on the Schottky layer, and
• said method comprises:
• isolating a part of the contact layer from the active device by forming a photoresist pattern on the contact layer and removing a predetermined area of the contact layer using the photoresist pattern;
• forming an active region including a part of the Schottky layer and a part of the channel layer, both of which are isolated from the active device by a device isolation region formed in the Schottky layer and the channel layer by etching using a photoresist pattern;
• forming two ohmic electrodes on the contact layer isolated from the active device;
• removing a predetermined area of the contact layer isolated from the active device so that the Schottky layer isolated from the active device is exposed between the two ohmic electrodes;
• and
• sulfurating an exposed area of the Schottky layer between the two ohmic electrodes.