Semiconductor transistor having structural elements of differing materials

A transistor, comprising:

• a semiconductor substrate;
• a control electrode overlying the semiconductor substrate;
• a first current electrode overlying the semiconductor substrate and adjacent a portion of a first side of the control electrode, the first current electrode comprised of a first predetermined semiconductor material;
• and
• a second current electrode overlying the semiconductor substrate and adjacent a portion of a second side of the control electrode, the first current electrode and the second current electrode forming a channel underlying the control electrode, the second current electrode having a second predetermined semiconductor material that is different from the first predetermined semiconductor material, the first predetermined semiconductor material being chosen to optimize bandgap energy of the first current electrode, and the second predetermined semiconductor material being chosen to optimize strain of the channel.

A transistor, comprising:

• a semiconductor substrate;
• a control electrode overlying the semiconductor substrate;
• a first current electrode overlying the semiconductor substrate and adjacent a portion of a first side of the control electrode, the first current electrode comprised of a first predetermined semiconductor material;
• a second current electrode overlying the semiconductor substrate and adjacent a portion of a second side of the control electrode, the first current electrode and the second current electrode forming a channel underlying the control electrode, the second current electrode having a second predetermined semiconductor material that is different from the first predetermined semiconductor material, the first predetermined semiconductor material being chosen to optimize bandgap energy of the first current electrode, and the second predetermined semiconductor material being chosen to optimize strain of the channel;
• and
• a sidewall spacer radially surrounding the control electrode and overlying each of the first current electrode and the second current electrode.

A transistor, comprising:

• a semiconductor substrate;
• a control electrode overlying the semiconductor substrate;
• a drain electrode overlying the semiconductor substrate and adjacent a portion of a first side of the control electrode, the drain electrode comprised of a high bandgap energy material of one of carbon doped silicon, silicon carbide or silicon;
• a source electrode overlying the semiconductor substrate and adjacent a portion of a second side of the control electrode, the drain electrode and the source electrode forming a channel underlying the control electrode, the source electrode comprised of a material differing from the drain electrode and which optimizes strain of the channel;
• and
• a sidewall spacer radially surrounding the control electrode and overlying each of the first current electrode and the second current electrode.