Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capability

A GaN-based LED device, comprising:

• a substrate;
• a buffer layer made of AlaGabIn1-a-bN (0≦a,b<1, a+b≦1) having a specific composition located on top of an upper side of said substrate;
• a first contact layer made of a GaN-based material having a first conduction type located on top of said buffer layer;
• an active layer made of InGaN located on top of a part of said first contact layer's upper surface;
• a first electrode located on top of another part of said first contact layer's upper surface not covered by said active layer;
• a second contact layer made of a GaN-based material having a second conduction type opposite to said first conduction type located on top of said active layer;
• an anti-ESD thin layer made of at least an undoped GaN-based material;
• a transparent conductive layer that is one of a metallic conductive layer and a transparent oxide layer located on top of said anti-ESD thin layer's upper surface;
• and
• a second electrode located on top of said transparent conductive layer or on top of another part of said anti-ESD thin layer's upper surface not covered by said transparent conductive layer.