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OwnerLiang-Wen Wu, Ru-Chin Tu +3inventors
InventorsLiang-Wen Wu, Ru-Chin Tu, Cheng-Tsang Yu, Tzu-Chi Wei, Fen-Ren Chien
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A buffer layer structure for the GaN-based semiconductor devices is provided. The buffer layer proposed by the present invention comprises internally at least two sub-layers: a first intermediate layer and a second intermediate layer. Initially, the first intermediate layer is developed on the substrate under a low temperature using silicon-nitride (SixNy, x,y≧0). The first intermediate layer is actually a mask having multiple randomly distributed SixNy clusters. Then, a second intermediate layer is developed under a low temperature using aluminum-indium-gallium-nitride (AlwInzGa1-w-zN, 0≦w,z<1, w+z≦1). The second intermediate layer does not grow directly on top of the first intermediate layer. Instead, the second intermediate layer first grows from the surface of the substrate not covered by the first intermediate layer's mask and, then, overflows to cover the top of the first intermediate layer. The buffer layer according to the present invention effectively reduces the defect density of the GaN-based semiconductor devices.
A buffer layer for a GaN-based semiconductor device, located on top of an upper side of said GaN-based semiconductor device's substrate made of a material selected from the group consisting of sapphire, 6H—SiC, 4H—SiC, Si, ZnO, GaAs, MgAl2O4, and an oxide monocrystalline having a lattice constant compatible with that of nitride semiconductors, and upon which said GaN-based semiconductor device's major epitaxial structure is developed, comprising:
A buffer layer for a GaN-based semiconductor device, located on top of an upper side of said GaN-based semiconductor device's substrate made of a material selected from the group consisting of sapphire, 6H—SiC, 4H—SiC, Si, ZnO, GaAs, MgAl2O4, and an oxide monocrystalline having a lattice constant compatible with that of nitride semiconductors, and upon which said GaN-based semiconductor device's major epitaxial structure is developed, comprising a plurality of pairs of intermediate layers, sequentially stacked on top of said upper side of said substrate, wherein each pair intermediate layers further comprises:
Dependencies are inferred from the claim text.