Thin film transistor array panel and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJe-Hun Lee, Beom-Seok Cho, Chang-Oh Jeong, Joo-Han Kim
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AssigneeSamsung Electronics Co., Ltd.
InventorsJe-Hun Lee, Beom-Seok Cho, Chang-Oh Jeong, Joo-Han Kim
Estimating the term…
The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode at on the gate electrode; and a pixel electrode electrically connected to the drain electrode.
A thin film transistor array panel comprising:
A manufacturing method of a thin film transistor array panel, comprising:
Dependencies are inferred from the claim text.