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US 2006/0076559 A1Published application
Method of fabricating an epitaxially grown layer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBruce Faure, Fabrice Letertre
Life of this patent
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Abstract
A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.
Claims22
A method of forming an epitaxially grown layer, comprising:
- providing a support substrate that includes a support portion and a remainder portion;
- transferring a nucleation portion onto the support portion by bonding, wherein the nucleation portion is selected and configured for improving conditions for growing an epitaxial layer compared to the support substrate;
- epitaxially growing an epitaxial layer on the nucleation portion;
- and
- removing the remainder portion from the support portion.
2 more elements
A multilayer substrate for producing a wafer with an epitaxial layer, the substrate comprising:
- a support substrate;
- a first region of weakness within the support substrate for dividing the support substrate into a support portion and a support remainder portion that are disposed on opposite sides of the first region of weakness, and being configured for facilitating detachment of the support portion from the support remainder portion, wherein the support portion is configured for providing support during epitaxial growth of an epitaxial layer;
- and
- a nucleation portion associated with the support substrate and being configured for improving conditions for growing an epitaxial layer compared to the support substrate.
1 more element
Dependencies are inferred from the claim text.