Light emitting device and method for fabricating the same

A light emitting device comprising:

• a substrate;
• a p-type contact layer formed over the substrate;
• an active layer formed over the p-type contact layer and formed of a plurality of quantum dot layers stacked, the quantum dot layers having three-dimensional grown islands self-formed by S-K mode, respectively;
• and
• an n-type semiconductor layer formed over the active layer.

A method for fabricating a light emitting device comprising the steps of:

• forming a p-type semiconductor layer over a substrate of a p-type semiconductor;
• forming over the p-type semiconductor layer an active layer formed of a plurality of quantum dot layers stacked, the quantum dot layers having three-dimensional grown islands self-formed by S-K mode, respectively;
• forming an n-type semiconductor layer over the active layer;
• and
• forming a lower electrode connected to the substrate and an upper electrode formed over the n-type semiconductor layer.

A method for fabricating a light emitting device comprising the steps of:

• forming a p-type contact layer over a substrate:
• forming over the p-type contact layer an active layer of a plurality of quantum dot layers stacked, the quantum dot layers having three dimensional grown island formed by S-K mode, respectively;
• forming an n-type semiconductor layer over the active layer;
• and
• forming a lower electrode connected to the p-type contact layer and an upper electrode formed over the n-type semiconductor layer.